H11A1TVM
Manufacturer:
On Semiconductor
Mfr.Part #:
H11A1TVM
Datasheet:
Description:
Phototransistor DIP-6 Through Hole Operating Supply Voltage:1.2 V
| Parameter | Value |
|---|---|
| Max Operating Temperature | 100 °C |
| Min Operating Temperature | -40 °C |
| Collector Emitter Breakdown Voltage | 100 V |
| Collector Emitter Voltage (VCEO) | 100 V |
| Power Dissipation | 270 mW |
| Rise Time | 2 µs |
| Fall Time | 2 µs |
| Dark Current | 1 nA |
| Packaging | Tube |
| Collector Emitter Saturation Voltage | 400 mV |
| Operating Supply Voltage | 1.2 V |
| RoHS | Compliant |
Stock: 1479
Distributors
pcbx
pcbxUnit Price$0.48218
Ext.Price$0.48218
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.48218 | $0.48218 |
| 10 | $0.29324 | $2.93240 |
| 25 | $0.27042 | $6.76050 |
| 50 | $0.24938 | $12.46900 |
| 100 | $0.22997 | $22.99700 |
| 300 | $0.22303 | $66.90900 |
| 500 | $0.21630 | $108.15000 |
| 1000 | $0.20775 | $207.75000 |
| 3000 | $0.16699 | $500.97000 |
| 5000 | $0.13423 | $671.15000 |
| 10000 | $0.12910 | $1291.00000 |